A Design of Experiment for High Throughput GaAs Via Etch by Reactive Ion Etch
碩士 === 國立清華大學 === 材料科學工程學系 === 88 === ABSTRACT A design of experiment for high throughputs GaAs via etch by reactive ion etch is reported herein. GaAs backside via process for connecting of the front side circuits to the backside ground plane will reduce the ground inductance and thus wil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39755843405695862627 |