A Multiple Page Programming Scheme in NAND Type Flash Memory
碩士 === 國立清華大學 === 電子工程研究所 === 88 === A fast programming scheme for NAND type architecture utilized cell storage and multiple wordline programming is dedicated in this study. In the prior arts, only multiple page programming is adopted to increase the program throughput. To obtain higher throughput,...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/12277428799668268460 |