TaSiN and TaSi Diffusion Barriers in Cu Metallization
碩士 === 國立清華大學 === 電子工程研究所 === 88 === TaSi and TaSiN with a various composition of Ta, Si, and N are fabricated in Ar or Ar/N2 gas mixtures by radio frequency reactive sputtering deposition. Both TaSi and TaSiN films are annealed at 950℃for 30 seconds in nitrogen ambient. The resistivity,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75773054399557390204 |