The Integration of Copper and Porous SiO2
碩士 === 國立清華大學 === 電子工程研究所 === 88 === The integration of copper and porous SiO2 were investigated. First, we fabricated porous SiO2 sample with different H2O/TEOS ratio to determine the optima deposition condition of the film. Secondly, the electroless plating copper/TaN or TaSi/porous SiO...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95448186620923991301 |