GaN Semiconductor with Applications relating to Light Emitting Diodes Grown by Vapor-Phase Epitaxy
博士 === 國立清華大學 === 電機工程學系 === 88 === This dissertation uses two kinds of growth technology including hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD) to investigate the zinc-blende and wurtzite GaN epitaxial films, respectively. To study zinc-blende, cubic epitaxi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39926271056879894642 |