GaN Semiconductor with Applications relating to Light Emitting Diodes Grown by Vapor-Phase Epitaxy
博士 === 國立清華大學 === 電機工程學系 === 88 === This dissertation uses two kinds of growth technology including hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD) to investigate the zinc-blende and wurtzite GaN epitaxial films, respectively. To study zinc-blende, cubic epitaxi...
Main Authors: | Yang, Chien-Cheng, 楊建成 |
---|---|
Other Authors: | Wu, Meng-Chyi |
Format: | Others |
Language: | zh-TW |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/39926271056879894642 |
Similar Items
-
Structural Development of GaN-Based Materials and Light Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy Technique
by: An-Ting Cheng, et al.
Published: (2008) -
Structural Development of GaN-Based Materials and Light Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy Technique
by: An-Ting Cheng, et al.
Published: (2008) -
III-Nitride Semiconductors and Blue Light-emitting Diodes Grown by Metalorganic Vapor-phase Epitaxy
by: Jinn-Kong Sheu, et al.
Published: (1999) -
Growth of InGaN Light-Emitting Diodes by Metal-Organic Vapor Phase Epitaxy
by: Chen-Yu Shieh, et al.
Published: (2015) -
The study on inGaP light emitting diode grown by liquid phase epitaxy
by: Lin, Guo Qi, et al.
Published: (1994)