Photoluminescence and photoreflectance study on Mg-diffused GaN
碩士 === 國立臺灣大學 === 光電工程學研究所 === 88 === In this paper, we report the study of optical properties of p-type GaN that was formed by Mg diffusion into MOCVD grown undoped n-type GaN using Mg3N2 as the Mg source. The MOCVD GaN was sealed with Mg3N2 powder in a vacuum quartz ampoule, then the ampoule was...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15648340069403308604 |