Submicron T-shape Gate FET Fabrication by Normal UV Lithography
碩士 === 國立臺灣大學 === 電機工程學研究所 === 88 === For obtaining more power gain and bandwidth of transistors, it is necessary to shrink gate length but at the same time reduce gate resistance. The device with T-shape (or mushroom) sub-micron gate is the most effective way to meet both requirements. First, we su...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/88936125652994256255 |