The Electrical and Optoelectronic Characterizations of GaAs:As+ and GaN Materials
碩士 === 大同大學 === 光電工程研究所 === 88 === We respectively study the current-voltage characteristics of AuGeNi contacts made on rapid-thermal annealed arsenic-ion-implanted S.I. GaAs (GaAs:As+) and Au contact made on S.I. GaN by using the measurements of TLM and I-V analysis. The key parameters such as lea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25040073224461153114 |