Study of Metal-Semiconductor Junction for n Type GaAs
碩士 === 中原大學 === 電子工程研究所 === 89 === Gallium Arsenic ( GaAs ) device applications have become very critical due to the requirement for global communication industrial growth. In General, GaAs devices have the merit of the higher electric mobility speed than Si devices, As a result, the sign...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05053625574726295357 |