| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 89 === Gallium Arsenic ( GaAs ) device applications have become very critical due to the requirement for global communication industrial growth. In General, GaAs devices have the merit of the higher electric mobility speed than Si devices, As a result, the signal to noise ratio of GaAs devices is relative low for high frequency applications. For artificial satellite communication requirement, the working devices have to expose in the outer space with highly radiated environment
The purpose of this thesis is to optimize the N-type GaAs process parameters and study the property for different metals and alloys such as Ti/Al and Au/Ge/Be.
In this experimental result, the ohmic contact and the schottky diode were successfully fabricated. the minimum specific resistanceρc of ohmic contact (Au/Ge/Ni/ n-type GaAs) were attained to 6.8 ×10-5 and 1.02 ×10-4 Ω-cm2 with corresponding annealing temperature at 300℃ and 350℃. In case of schottky contact for Ti/Al, The turn-on and break-down voltage and ideality factor also have been calculated when the annealing temperature was set at 300℃ and 350℃.
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