Titanium Nitride As Sensing Film For Extended Gate Field Effect Transistor
碩士 === 中原大學 === 電子工程研究所 === 89 === An extended gate field effect transistor (EGFET) is another structure to produce FET isolation from the chemical environment, in which a chemically sensitive membrane is deposited on the end of signal line extended from the FET gate electrode. This structure has a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13305500045155784436 |