Growth of ZnSe-based epilayers and multiple quantum wells by molecular beam epitaxy
碩士 === 中原大學 === 應用物理研究所 === 89 === This thesis are divided into two parts. In the first part,thin Zn1-XCdXSe epilayers (about 50nm) were grown on GaAs substrate by molecular beam epitaxy to study the strain effect. In the second part,Te atoms were grown at the center of multiple quantum well(MQW) s...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30544172032844544176 |