Study of Inductively Coupled Plasma Etching on GaN
碩士 === 中原大學 === 應用物理研究所 === 89 === Abstract Inductively coupled plasma（ICP） technique was used to etch GaN epilayer. Etching rates were studied as a function of gas mixing ratio, ICP power and rf power. Surface morphology after etching was observed by using scanning electron microscope（SEM）. Severa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29645527473141318087 |