Growth and Opotoelectronic Properties of InN Thin Films
碩士 === 輔仁大學 === 物理學系 === 89 === Abstract Indium nitride (InN), with its wurtzite crystal structure and 1.9 eV direct band gap, is a promising III-V compound semiconductor for high efficiency solar cells. In this study, indium nitride film was successfully grown on sapphire (0001) substrat...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25979473394887097897 |