Modeling and Simulation Of High Speed Power Semiconductor Devices
碩士 === 義守大學 === 電子工程學系 === 89 === ABSTRACT Insulated-gate bipolar transistor (IGBT) has been used extensively in power controlled circuit of its electric power industry because of the excellent characteristics. IGBT has the combined advantages of MOSFET's high impedance an...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37003249537546045125 |