利用變溫霍爾效應測試半導體二維系統的基本特性
碩士 === 國立中興大學 === 物理學系 === 89 === In this thesis, we study the basic transport properties of the 2D hole system (2DHS) confined in SiGe/Si hetero-structure grown by MBE. We can tune the carrier density by justing the spacer layer thickness. We use the Hall effect measurement to...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/65994805153308186838 |