利用變溫霍爾效應測試半導體二維系統的基本特性

• Main Authors: CHANG, CHIA FEN, 張佳芬
• Other Authors: SUEN, YU-WUU
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/65994805153308186838

碩士 === 國立中興大學 === 物理學系 === 89 === In this thesis, we study the basic transport properties of the 2D hole system (2DHS) confined in SiGe/Si hetero-structure grown by MBE. We can tune the carrier density by justing the spacer layer thickness. We use the Hall effect measurement to obtain the density, and the mobility of the 2DHS. We also change the sample temperature to check the temperature dependence. It is very important to control the magnetic field and temperature during this experiment. We use a close cycle cryostat to control the temperature of samples between 10K and 295K. At each stable temperature, we sweep the magnetic field which is perpendicular to the surface of samples and use the lock-in technique to measure the resistance. Finally, from the temperature dependence of mobility, we can determine the most significant scattering mechanism at different temperature.