Compact Expressions for Crosstalk of Multiple Bit Lines in DRAM

碩士 === 國立中興大學 === 電機工程學系 === 89 === As VLSI circuits migrate to high density, DRAM device technology advances to the deep sub-micron range. The small devices can meet the requirement of the high- speed and high-density, but many other problems degrade circuit performance or even invalidat...

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Bibliographic Details
Main Authors: Yun-Tso Lai, 賴昀佐
Other Authors: Hongchin Lin
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/07733719348103746343