A Research on (Ba,Sr)TiO3 Thin Films for Dynamic Random Access Memory Applications
碩士 === 國立中興大學 === 精密工程研究所 === 89 === One of the key processing issues involved in the integration of Barium strontium titanate (BST) capacitor device into the existing dynamic random access memories (DRAMs) process is using for material of electrodes and the etching of these films. Due to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28147469114760058534 |