Ohmic Contacts and Interfacial Reactions of Hf/p-Si0.85Ge0.15 and Hf/n-GaN
碩士 === 國立成功大學 === 材料科學及工程學系 === 89 === Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15 and Hf/n-GaN were studied. For Hf/p-Si0.85Ge0.15 samples, Hf3(Si1-xGex) and Hf(Si1-xGex)2 were initially formed at 500℃ and 600℃, respectively. At temperatures above 400℃ Ge segregation out of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38404984580884806886 |