Computer Simulation Studies of 0.13μm MOSFETs Performances and The Impact of Nitrogen Implantation Prior to the Gate Oxide Growth on the Reliability of Deep Submicron MOSFETs
碩士 === 國立成功大學 === 電機工程學系 === 89 === Firstly, the effect of Halo(High Altitude Long Operation) and LDD(Lightly Doped Drain) ion implantation on the characteristics of MOSFETs with 0.18μm technology is studied in the thesis. For higher LDD dose, the device threshold voltage is smaller and t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83563118449341327893 |