Interface Trap Generation Mechanisms under Dynamic Stress in MOSFETs

碩士 === 國立成功大學 === 電機工程學系 === 89 === Interface trap generation in MOSFET during dynamic stress with FN injection is investigated with charge pumping technique. It can be observed that the interface traps generated after FN injection. The beginning voltage of interface trap generation is no...

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Bibliographic Details
Main Authors: Yung-Sheng Tseng, 曾詠生
Other Authors: Yeong-Her Wang
Format: Others
Language:en_US
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/58274079140347206354