Theoretical and Experiments for Analysis the Tribochemical Reactions on Cu-film Influenced by Displacement Energy in Chemical Mechanical Polishing

碩士 === 國立成功大學 === 機械工程學系 === 89 === The removal rate of Chemical Mechanical Polishing (CMP) is researched in view of chemical reaction in this study. The study models CMP into mechanical and chemical parts respectively. In the mechanical part, the three-bodies contact (wafer, powder, and...

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Bibliographic Details
Main Authors: Yi-Ming Chen, 陳宜銘
Other Authors: Jen-Fin Lin
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/03693157322378179344