The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === In this thesis, we have fabricated a new InGaP/GaAs heterostructure grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for MESFET applications. The study includesd the epitaxial growth of the InGaP/GaAs heterostructure, structure and propert...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21048901956612786991 |