| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系 === 89 === In this thesis, we have fabricated a new InGaP/GaAs heterostructure grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for MESFET applications. The study includesd the epitaxial growth of the InGaP/GaAs heterostructure, structure and property characterization of epitaxial layers in different growth conditions.
In the growth of InGaP and GaAs epi-layers, V/III-ratio was optimized to achieve the lattice-matched, strain free structure. Double crystal x-ray diffraction quantitatively studied the lattice mismatch of epitaxy. PL-FWHM data proved the superior properties of the epitaxial layer. To establish a better InGaP/GaAs heterostructure, the proper switching of group Ⅴ source (As and P) played a important role. The quality of the heterojunction between InGaP and GaAs was controlled carefully by a “trade-off” switching condition. Smooth interface between InGaP and GaAs was obtained due to the optimization of the switching conditions in this study.
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