The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === In this thesis, we have fabricated a new InGaP/GaAs heterostructure grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for MESFET applications. The study includesd the epitaxial growth of the InGaP/GaAs heterostructure, structure and propert...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2001
|
Online Access: | http://ndltd.ncl.edu.tw/handle/21048901956612786991 |
id |
ndltd-TW-089NCTU0159037 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-089NCTU01590372016-01-29T04:28:13Z http://ndltd.ncl.edu.tw/handle/21048901956612786991 The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD 以低壓有機金屬化學汽相沉積法成長磷化銦鎵與砷化鎵異質結構之研究 Gu Cheng-Fang 顧成芳 碩士 國立交通大學 材料科學與工程系 89 In this thesis, we have fabricated a new InGaP/GaAs heterostructure grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for MESFET applications. The study includesd the epitaxial growth of the InGaP/GaAs heterostructure, structure and property characterization of epitaxial layers in different growth conditions. In the growth of InGaP and GaAs epi-layers, V/III-ratio was optimized to achieve the lattice-matched, strain free structure. Double crystal x-ray diffraction quantitatively studied the lattice mismatch of epitaxy. PL-FWHM data proved the superior properties of the epitaxial layer. To establish a better InGaP/GaAs heterostructure, the proper switching of group Ⅴ source (As and P) played a important role. The quality of the heterojunction between InGaP and GaAs was controlled carefully by a “trade-off” switching condition. Smooth interface between InGaP and GaAs was obtained due to the optimization of the switching conditions in this study. Edward Yi Chang 張 翼 2001 學位論文 ; thesis 61 en_US |
collection |
NDLTD |
language |
en_US |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === In this thesis, we have fabricated a new InGaP/GaAs heterostructure grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for MESFET applications. The study includesd the epitaxial growth of the InGaP/GaAs heterostructure, structure and property characterization of epitaxial layers in different growth conditions.
In the growth of InGaP and GaAs epi-layers, V/III-ratio was optimized to achieve the lattice-matched, strain free structure. Double crystal x-ray diffraction quantitatively studied the lattice mismatch of epitaxy. PL-FWHM data proved the superior properties of the epitaxial layer. To establish a better InGaP/GaAs heterostructure, the proper switching of group Ⅴ source (As and P) played a important role. The quality of the heterojunction between InGaP and GaAs was controlled carefully by a “trade-off” switching condition. Smooth interface between InGaP and GaAs was obtained due to the optimization of the switching conditions in this study.
|
author2 |
Edward Yi Chang |
author_facet |
Edward Yi Chang Gu Cheng-Fang 顧成芳 |
author |
Gu Cheng-Fang 顧成芳 |
spellingShingle |
Gu Cheng-Fang 顧成芳 The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD |
author_sort |
Gu Cheng-Fang |
title |
The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD |
title_short |
The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD |
title_full |
The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD |
title_fullStr |
The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD |
title_full_unstemmed |
The Study of InGaP/GaAs Heterostructure Grown by LP-MOCVD |
title_sort |
study of ingap/gaas heterostructure grown by lp-mocvd |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/21048901956612786991 |
work_keys_str_mv |
AT guchengfang thestudyofingapgaasheterostructuregrownbylpmocvd AT gùchéngfāng thestudyofingapgaasheterostructuregrownbylpmocvd AT guchengfang yǐdīyāyǒujījīnshǔhuàxuéqìxiāngchénjīfǎchéngzhǎnglínhuàyīnjiāyǔshēnhuàjiāyìzhìjiégòuzhīyánjiū AT gùchéngfāng yǐdīyāyǒujījīnshǔhuàxuéqìxiāngchénjīfǎchéngzhǎnglínhuàyīnjiāyǔshēnhuàjiāyìzhìjiégòuzhīyánjiū AT guchengfang studyofingapgaasheterostructuregrownbylpmocvd AT gùchéngfāng studyofingapgaasheterostructuregrownbylpmocvd |
_version_ |
1718170697105145856 |