Hybrid Photo-enhanced Wet Etch and Inductively Coupled Plasma Etch on GaN
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === GaN and AlGaN Schottky contact characteristics after hybrid photo-enhanced wet etch and Inductively coupled plasma etch (ICP) is studied. KOH solution and 100mW/cm2 UV illumination by Hg arc lamp was used for photo-enhanced wet etch. Gas mixture of Cl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09079794613954488023 |