Abrasive Free Polishing for ULSI Cu Damascene Interconnect
碩士 === 國立交通大學 === 材料科學與工程系 === 89 === For improving the effectiveness of semiconductor device, instead of aluminum interconnection by copper material has become necessary in ULSI IC process. It is because copper has higher electron migration and lower resistance. However, although chemical mechanica...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73541769938010128517 |