The Atomic Arrangements Around Steps of the Si(100)-c(4x4) Surface
碩士 === 國立交通大學 === 物理研究所 === 89 === This work studied on the atomic arrangements around the steps of Si(100)-c(4x4) surface. Due to the geometric period of Si(100)-c(4×4), there were 32 possible atomic arrangements near the steps . This study analyzed the density of dangling bonds. We also...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48184484347272708979 |