Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors
碩士 === 國立交通大學 === 電子工程系 === 89 === In this thesis, we have proposed and demonstrated a novel poly-Si Schottky barrier thin-film transistor (SB-TFT) with field induced drain (FID). The FID SB-TFT features Co-silicided source/drain and a metal field-plate (i.e., sub-gate) lying over the pas...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46332416298206563760 |