Al2O3-Superlattice Light-Emitting Tunnel Diode
碩士 === 國立交通大學 === 電子工程系 === 89 === An ITO/superlattice/p-Si tunnel diode used as a light-emitting device was made on the Si substrate. The superlattice (SL) is formed by alternatively depositing ITO and Al2O3 materials, and the thickness of each SL layer is in the range of 10~20Å. At a fo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50684681770027768580 |