The study of the characteristic of the ultrathin gate oxynitride grown by means of the chemical oxide and the nitridation of LPCVD
碩士 === 國立交通大學 === 電子工程系 === 89 === Abstract It is an inevitable trend for the gate dielectric to fabricate the ultrathin oxide in the future ULSI applications. However, it is difficult to fabricate the ultrathin gate oxide about 2nm in a stable and good environment. In spite of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49803455609203587669 |