| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 89 === Abstract
It is an inevitable trend for the gate dielectric to fabricate the ultrathin oxide in the future ULSI applications. However, it is difficult to fabricate the ultrathin gate oxide about 2nm in a stable and good environment. In spite of success of it, the boron atoms will penetrate into the thin oxide easily and lead to the reliability problem because the thickness of the oxide is too thin and boron is one kind of active atoms. In order to overcome its reliability problem, we use a new method to fabricate a better gate oxide. First, we grow a chemical oxide before the dry oxidation is put into practice. Second, it will be nitridized in the pure ammonia gas. Finally, the ultra-thin gate oxynitride is finished after the dry oxidation is carried out. The chemical oxide and the nitrogen that piles up at the top of the oxide bulk and at the interface between the silicon and the gate oxide will improve the I-V characteristic and C-V characteristic. We will know that the leakage current will be lower and the boron penetration will be suppressed in out studies. Therefore, it is practicable for our ultra-thin oxynitride if the device is scaled down. In the meanwhile, it can also be predicted that it can be applied to the high-K materials.
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