Fabrication and Development of Schottky Source/Drain SOI MOSFET
碩士 === 國立交通大學 === 電子工程系 === 89 === In this thesis, we have fabricated Schottky barrier (SB) MOSFET on SOI wafers. SB MOSFET employs silicide source/drain in lieu of ion implanted source/drain. So it is simple in processing, well suited for low temperature process. Further, it can operate...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70971964426233369960 |