Process Optimization of Trench-Gate for Power MOSFET
碩士 === 國立交通大學 === 電子工程系 === 89 === Power MOSFET is characterized by a low on-resistance and high blocking voltage characteristics. The basic structure of power MOSFET consists of an epitaxial layer for voltage blocking and a drain electrode at the substrate contact. In the conv...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/09013082451126348830 |