The Study of F Doped SiO2 Films Grown by PECVD
碩士 === 國立交通大學 === 電子工程系 === 89 === We can divide the thesis into two parts. One part of the thesis studies the un-doped oxide. Another studies the F-doped oxide. We grew the thin films by the PD-240 PECVD from SAMCO International Inc and found the optimum conditions of the oxide films. Fi...
Main Authors: | Chao-Chuan Chang, 張朝銓 |
---|---|
Other Authors: | Jen-Chung Lou |
Format: | Others |
Language: | en_US |
Published: |
2001
|
Online Access: | http://ndltd.ncl.edu.tw/handle/34679855963836104704 |
Similar Items
-
Recrystallization of PECVD amorphous silicon films on SiO2 substrates
by: ZHANG,RUI-DA, et al.
Published: (1990) -
Fabrication of P-doped SiO2 Planar Waveguide by PECVD and Nonlinear Optical Properties Study
by: Chien-Chou Chen, et al.
Published: (2003) -
Investigation of the low stress TEOS SiO2 films by low temperature PECVD processing
by: Yu-Ting Huang, et al.
Published: (2015) -
A study on the nonlinear optical properties of PECVD fabricated Ge-doped SiO2 planar waveguide
by: Bor-Wen Jan, et al.
Published: (2004) -
A study on the nonlinear optical properties of Ge-doped SiO2 planar waveguide on Si substrate prepared by PECVD.
by: Ying-ru Chen, et al.
Published: (2005)