Bias and Temperautre Dependent Reliability for Dual Gate CMOS Devices Fabricated Using Multi-Oxide Technology
碩士 === 國立交通大學 === 電子工程系 === 89 === System-on-a-chip (SoC) has received considerable attention for the future dual gate CMOS technology. One of the major technological requirements of SoC is the ability to grow multi-gate oxide thickness, and then multiple supply voltages are used on one c...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99430765143150727808 |