| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 89 === There are two parts in the thesis. In the first part, we use the high oxidizing potential of ozonated DI-water to grow a thin chemical oxide layer. The factors including the concentration, temperature and immersion time were controlled to find the relation between these factors and the oxide thickness. Increasing the concentration, temperature will increase the thickness of oxide. The thickness almost reaches saturation within 10 seconds, and the oxide film was grown very slowly for the continuous immersion time.
In the second part, we use a process different from the conventional RCA clean before gate oxide growth. An ozonated DI-water immersion process was added at the last HF dip step. A dense structure oxide was grown before thermal gate oxide growth. A MOS capacitor was manufactured to measure the electric characteristics. The leakage current density and trap charges will decrease and the breakdown voltage will increase when the sample immersed ozonated DI-water before growing thermal gate oxide. The higher concentration and the longer immersion time will have a better performance for the device.
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