The effects of Surface Plasma Treatment on HSQ and Copper Electromigration
碩士 === 國立交通大學 === 電子工程系 === 89 === The bond structure change and gas desorption from chemical reaction of HSQ during thermal process was observed by FTIR and TDS. The thickness and refractive index of different curing temperature were investigated and it was found that HSQ would become m...
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36949402139746089460 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 89 === The bond structure change and gas desorption from chemical reaction of HSQ during thermal process was observed by FTIR and TDS. The thickness and refractive index of different curing temperature were investigated and it was found that HSQ would become more silica like with higher curing temperature. The chemical bond structure change with different curing temperatures was also observed. The H2 plasma treatment can enhance the water resistance of damaged HSQ film. The Si-OH bond increment due to O2 plasma damage was also reduced by H2 plasma pre-treatment. The tensile stress increment after plasma treatment shows the plasma treatment would make HSQ films denser and avoid the injuries from subsequent processes. The SIMS depth profiles show the resistance of copper diffusion into HSQ was improved by plasma treatment. The surface of HSQ is roughened by H2 plasma treatment. The rougher surface makes the upper copper film has worse degree of preferred (111) crystallization and a loose structure. The poor quality of copper film deposited on plasma treated HSQ degrades the electromigration performance.
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