Capacitance measurements of an InGaN/GaN multi-quantum-well blue light-emitting diode
碩士 === 國立交通大學 === 電子物理系 === 89 === We have studied the electrical properties of an InGaN/GaN multi-quantum-well blue light-emitting diode (LED) by capacitance and admittance measurements. A defect with an energy level of 100 and capture cross-section of was found to locate in the regio...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08922245455522804715 |