Study of Au/Ta/Au ohmic contacts on p-GaN
碩士 === 國立交通大學 === 電子物理系 === 89 === We have studied a set of the ohmic contact of p-type GaN using alloy. The intended use of Tantalum (Ta) in this study is because of its capability of removing native oxide of GaN epilayer. So that the carrier transport can be greatly improves. This Ta-la...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/68769052344314355043 |