Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy
碩士 === 國立交通大學 === 電子物理系 === 89 === Abstract The samples of single InAs/GaAs QD and superlattice InAs/GaAs QDs with RTA (rapid thermal annealing) at different temperature are investigated by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurement. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13468042404565565028 |