Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy
碩士 === 國立交通大學 === 電子物理系 === 89 === Abstract The samples of single InAs/GaAs QD and superlattice InAs/GaAs QDs with RTA (rapid thermal annealing) at different temperature are investigated by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurement. The...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2001
|
Online Access: | http://ndltd.ncl.edu.tw/handle/13468042404565565028 |
id |
ndltd-TW-089NCTU0429027 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-089NCTU04290272016-01-29T04:28:14Z http://ndltd.ncl.edu.tw/handle/13468042404565565028 Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy InAs/GaAs量子點電容-電壓和深層能階暫態頻譜之電性研究 S. H. Shih 石昇弘 碩士 國立交通大學 電子物理系 89 Abstract The samples of single InAs/GaAs QD and superlattice InAs/GaAs QDs with RTA (rapid thermal annealing) at different temperature are investigated by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurement. The C-V measurement shows carrier confinement for 2.3ML single QD and 7.56Å superlattice QDs samples. And the carrier depletion by lattice relaxation is observed in 3.4ML QD sample. For the 2.3ML single QD sample, the quantum-confinement peak concentration of at low temperature is higher than at room temperature. However, in superlattice QDs, the quantum peak concentration is found lower at low temperature than at room temperature. These effects are found to reduce for samples after annealing at high temperature. In contrast with the 2.3ML single QD sample which no traps is found, three traps at 0.63, 0.51 and 0.37eV are detected in the 3.4ML single QD sample. The trap at 0.63eV has been found in plastic deformation GaAs bulk material. The traps at 0.51 and 0.37eV are found similar to the traps observed in relaxed 1000Å In0.2Ga0.8As/GaAs single quantum well structure and are suspected to be related to lattice relaxation. In superlattice QDs samples, two traps at 0.39 and 0.54eV are detected. The trap at 0.54eV is similar to the 0.51eV trap found in 3.4ML single QD indicating that the superlattice QD sample is relaxed. Moreover the concentration of both traps can be decreased with increasing RTA temperature. J. F. Chen 陳振芳 2001 學位論文 ; thesis 0 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立交通大學 === 電子物理系 === 89 === Abstract
The samples of single InAs/GaAs QD and superlattice InAs/GaAs QDs with RTA (rapid thermal annealing) at different temperature are investigated by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurement. The C-V measurement shows carrier confinement for 2.3ML single QD and 7.56Å superlattice QDs samples. And the carrier depletion by lattice relaxation is observed in 3.4ML QD sample. For the 2.3ML single QD sample, the quantum-confinement peak concentration of at low temperature is higher than at room temperature. However, in superlattice QDs, the quantum peak concentration is found lower at low temperature than at room temperature. These effects are found to reduce for samples after annealing at high temperature. In contrast with the 2.3ML single QD sample which no traps is found, three traps at 0.63, 0.51 and 0.37eV are detected in the 3.4ML single QD sample. The trap at 0.63eV has been found in plastic deformation GaAs bulk material. The traps at 0.51 and 0.37eV are found similar to the traps observed in relaxed 1000Å In0.2Ga0.8As/GaAs single quantum well structure and are suspected to be related to lattice relaxation. In superlattice QDs samples, two traps at 0.39 and 0.54eV are detected. The trap at 0.54eV is similar to the 0.51eV trap found in 3.4ML single QD indicating that the superlattice QD sample is relaxed. Moreover the
concentration of both traps can be decreased with increasing RTA temperature.
|
author2 |
J. F. Chen |
author_facet |
J. F. Chen S. H. Shih 石昇弘 |
author |
S. H. Shih 石昇弘 |
spellingShingle |
S. H. Shih 石昇弘 Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy |
author_sort |
S. H. Shih |
title |
Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy |
title_short |
Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy |
title_full |
Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy |
title_fullStr |
Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy |
title_full_unstemmed |
Electrical Characterizations of InAs/GaAs Quantum Dots by Capacitance-Voltage and Deep-Level Transient Spectroscopy |
title_sort |
electrical characterizations of inas/gaas quantum dots by capacitance-voltage and deep-level transient spectroscopy |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/13468042404565565028 |
work_keys_str_mv |
AT shshih electricalcharacterizationsofinasgaasquantumdotsbycapacitancevoltageanddeepleveltransientspectroscopy AT shíshēnghóng electricalcharacterizationsofinasgaasquantumdotsbycapacitancevoltageanddeepleveltransientspectroscopy AT shshih inasgaasliàngzidiǎndiànróngdiànyāhéshēncéngnéngjiēzàntàipínpǔzhīdiànxìngyánjiū AT shíshēnghóng inasgaasliàngzidiǎndiànróngdiànyāhéshēncéngnéngjiēzàntàipínpǔzhīdiànxìngyánjiū |
_version_ |
1718170978756853760 |