Finite Element Methods for the Boltzmann Transport Equation
碩士 === 國立交通大學 === 應用數學系 === 89 === In the process of ion implantation, ions are implanted into the semiconductor by means of a high-energy ion beam. The energetic ions lose their energy through collisions with electrons and nuclei in the substrate such as silicon and finally come to rest....
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55711632859994660399 |