Optical, Electrical, and Structure Analysis of Ion-implanted GaN
碩士 === 國立中央大學 === 物理研究所 === 89 === In the properties of structure, the expansion of the strain made by implanted ions was calculated as 0.0028 and 0.0034 for Zn and Mg ion implanted samples respectively. XRD results show that samples annealed in oxygen-containing atmospheres will introduce compressi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32728301757650915650 |