Deposition and Characterization of c-BN and
碩士 === 國立東華大學 === 材料科學與工程研究所 === 89 === Advanced ion-assisted, high-rate, reactive and DC power magnetron sputtering technique with radio frequency ( RF ) substrate bias voltage was used to deposit boron nitride (BN:C) films by sputtering a boron carbide (B4C) target in argon and nitrogen...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03814324883786616655 |