Fabrication and Characterization of a Planar 0.65μm Diode laser with Facet Coating

碩士 === 國立高雄師範大學 === 物理學系 === 89 === High-power semiconductor laser with facet coatings lasing at a wavelength of 650 nm have been fabricated. A buried GaInP/AlGaInP quantum well laser structure were used in these processes. After processing, the samples are cleaved into bars with a cavity length of...

Full description

Bibliographic Details
Main Author: 劉世華
Other Authors: 周建和
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/24051796329110132695