Applications of Anisotropic Etching On Silicon Substrate : Si-molding and Si V-grooves

• Main Authors: Chien-Chou CHEN, 陳建州
• Other Authors: A.K. Chu
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/58732143413743275541

碩士 === 國立中山大學 === 機械工程學系研究所 === 89 === The objective of this thesis is to apply semiconductor etching process technologies on 6 inch P-type Si substrate and produce a mold of Light Guiding Plate (LGP). After evaporate chromium (Cr) onto the Si substrate as etch mask, the thin films were then patterned and subsequently etch by plasma. Different powers were used to compare the cross-sections of the patterns. The results would be the references of Si molding process. Another objective is to fabricate Si-V grooves which can connect the fibers and accurately position fibers. Anisotropic etching of Si-V grooves were formed using EDP solution, and sputtered Ta2O5 was used as the etch mask. At a etching temperature of 1100C, the under cut is 2.5~3mm . Additionally using SiO2 as etch mask by thermo evaporation at 1050℃ .Use EDP solution at 1100C, the under cut is 2.25mm which had a better result.