A Study of Electrochemical behavior of Copper in Chemical Mechanical Planarization Slurry

碩士 === 國立清華大學 === 材料科學工程學系 === 89 === Abstract Chemical mechanical polishing (CMP) has long been recognized as a viable technique for global planarization to delineate metal patterns for sub-micron integrated circuit (IC) processing. Copper (Cu) has been used as multilevel interconnects a...

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Bibliographic Details
Main Authors: Yi-Liang Tsai, 蔡依良
Other Authors: Han-C Shih
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/75302200760840180787